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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO IN Collector-emitter voltage ANG CH 2SC1913 2SC1913A 2SC1913 SEM E Open emitter OND IC CONDITIONS TOR UC VALUE 150 180 150 UNIT V Open base 180 Open collector 5 1 1.5 TC=25ae 15 150 -55~150 ae ae V 2SC1913A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SC1913 V(BR)CEO Collector-emitter breakdown voltage 2SC1913A V(BR)EBO Emitter-base breakdown voltage 2SC1913 VCEsat Collector-emitter saturation voltage 2SC1913A VBEsat ICBO IEBO hFE-1 hFE-2 COB fT Base-emitter saturation voltage Collector cut-off current Emitter cut-off current IC=0.3A; IB=30mA VCB=120V; IE=0 VEB=4V; IC=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V IC=0.3A; IB=30mA IE=10|I A ,IC=0 IC=0.1mA ,IB=0 CONDITIONS 2SC1913 2SC1913A SYMBOL MIN 150 TYP. MAX UNIT V 180 5 1.0 V 1.5 1.5 1 1 65 |I |I V A A V DC current gain DC current gain Output capacitance Transition frequency HAN INC Q 90-155 R 130-220 SEM GE S 185-330 IE=0 ; VCB=100V;f=1MHz OND IC 50 TOR UC 330 15 120 pF MHz IC=50mA ; VCE=10V hFE-1 Classifications P 65-110 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1913 2SC1913A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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